IAUC80N04S6L032ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IAUC80N04S6L032ATMA1
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 18µA
Supplier Device Package: PG-TDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 23.67 грн |
| 10000+ | 21.74 грн |
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Технічний опис IAUC80N04S6L032ATMA1 Infineon Technologies
Description: IAUC80N04S6L032ATMA1, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 18µA, Supplier Device Package: PG-TDSON-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUC80N04S6L032ATMA1 за ціною від 21.76 грн до 64.49 грн
| Фото | Назва | Виробник | Інформація |
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IAUC80N04S6L032ATMA1 | Виробник : Infineon Technologies |
Description: IAUC80N04S6L032ATMA1 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.29mOhm @ 40A, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 18µA Supplier Device Package: PG-TDSON-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1515 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 12072 шт: термін постачання 21-31 дні (днів) |
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IAUC80N04S6L032ATMA1 | Виробник : Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
на замовлення 4945 шт: термін постачання 21-30 дні (днів) |
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IAUC80N04S6L032ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 40V 80A Automotive 8-Pin TDSON EP T/R |
товар відсутній |
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| IAUC80N04S6L032ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 5000 шт |
товар відсутній |
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| IAUC80N04S6L032ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS™ 6; unipolar; 40V; 66A; Idm: 320A; 50W Type of transistor: N-MOSFET Technology: OptiMOS™ 6 Polarisation: unipolar Drain-source voltage: 40V Drain current: 66A Pulsed drain current: 320A Power dissipation: 50W Case: PG-TDSON-8 Gate-source voltage: ±16V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |