IAUCN04S6N009TATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
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Технічний опис IAUCN04S6N009TATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 330A (Tj), Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V, Power Dissipation (Max): 178W (Tc), Vgs(th) (Max) @ Id: 3V @ 90µA, Supplier Device Package: PG-LHDSO-10-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S6N009TATMA1 за ціною від 70.35 грн до 217.91 грн
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IAUCN04S6N009TATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 330A (Tj) Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 3V @ 90µA Supplier Device Package: PG-LHDSO-10-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2077 шт: термін постачання 21-31 дні (днів) |
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IAUCN04S6N009TATMA1 | Infineon Technologies |
MOSFET MOSFET_(20V 40V) |
на замовлення 1697 шт: термін постачання 21-30 дні (днів) |
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| IAUCN04S6N009TATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330A (Tj)
Rds On (Max) @ Id, Vgs: 0.89mOhm @ 60A, 10V
Power Dissipation (Max): 178W (Tc)
Vgs(th) (Max) @ Id: 3V @ 90µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7345 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2077 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 206.16 грн |
| 10+ | 129.12 грн |
| 100+ | 89.34 грн |
| 500+ | 70.35 грн |
| IAUCN04S6N009TATMA1 |
|
Виробник: Infineon Technologies
MOSFET MOSFET_(20V 40V)
MOSFET MOSFET_(20V 40V)
на замовлення 1697 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 217.91 грн |
| 10+ | 178.32 грн |
| 100+ | 124.05 грн |
| 250+ | 114.18 грн |
| 500+ | 103.61 грн |
| 1000+ | 88.81 грн |
| 2000+ | 83.87 грн |