IAUCN04S7L025AHATMA1 Infineon Technologies
Виробник: Infineon TechnologiesMOSFETs 40 V, N-Ch, 2.56 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
на замовлення 5880 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 96.80 грн |
| 10+ | 62.70 грн |
| 100+ | 45.32 грн |
| 500+ | 43.58 грн |
| 1000+ | 42.11 грн |
| 2500+ | 41.35 грн |
Відгуки про товар
Написати відгук
Технічний опис IAUCN04S7L025AHATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), 40W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V, Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V, Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA, Supplier Device Package: PG-TDSON-8-57, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S7L025AHATMA1 за ціною від 77.49 грн до 162.37 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IAUCN04S7L025AHATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
|
|
IAUCN04S7L025AHATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj), 65A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2518pF @ 20V, 915pF @ 20V Rds On (Max) @ Id, Vgs: 2.56mOhm @ 50A, 10V, 5.04mOhm @ 30A, 10V Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V, 14nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 25µA, 1.8V @ 10µA Supplier Device Package: PG-TDSON-8-57 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |