| Кількість | Ціна |
|---|---|
| 2+ | 175.97 грн |
| 10+ | 124.82 грн |
| 100+ | 80.35 грн |
| 500+ | 67.87 грн |
| 1000+ | 65.34 грн |
| 2500+ | 63.22 грн |
| 5000+ | 57.65 грн |
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Технічний опис IAUCN04S7N005ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tj), Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V, Power Dissipation (Max): 179W (Tc), Vgs(th) (Max) @ Id: 3V @ 95µA, Supplier Device Package: PG-TDSON-8-43, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S7N005ATMA1 за ціною від 71.58 грн до 223.61 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUCN04S7N005ATMA1 | Infineon Technologies |
 Description: MOSFET_(20V 40V)Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V Power Dissipation (Max): 179W (Tc) Vgs(th) (Max) @ Id: 3V @ 95µA Supplier Device Package: PG-TDSON-8-43 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 1103 шт: термін постачання 21-31 дні (днів) |
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| IAUCN04S7N005ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
на замовлення 1103 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 223.61 грн |
| 10+ | 140.04 грн |
| 100+ | 96.97 грн |
| 500+ | 73.73 грн |
| 1000+ | 71.58 грн |