IAUCN04S7N010GATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: IAUCN04S7N010GATMA1
Packaging: Tray
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V
Power Dissipation (Max): 123W (Tc)
Vgs(th) (Max) @ Id: 3V @ 50µA
Supplier Device Package: PG-THSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V
Qualification: AEC-Q101
на замовлення 980 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 193.08 грн |
| 10+ | 119.98 грн |
| 100+ | 82.34 грн |
| 500+ | 62.14 грн |
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Технічний опис IAUCN04S7N010GATMA1 Infineon Technologies
Description: IAUCN04S7N010GATMA1, Packaging: Tray, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tj), Rds On (Max) @ Id, Vgs: 1.04mOhm @ 88A, 10V, Power Dissipation (Max): 123W (Tc), Vgs(th) (Max) @ Id: 3V @ 50µA, Supplier Device Package: PG-THSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 76.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5026 pF @ 20 V, Qualification: AEC-Q101.