IAUCN04S7N024HATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 188.30 грн |
| 10+ | 116.72 грн |
| 50+ | 88.79 грн |
| 100+ | 74.85 грн |
| 500+ | 60.00 грн |
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Технічний опис IAUCN04S7N024HATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel, Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: PG-TDSON-8-56, Vgs(th) (Max) @ Id: 3V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Drain to Source Voltage (Vdss): 40V, Power - Max: 75W (Tc), Technology: MOSFET (Metal Oxide).
Інші пропозиції IAUCN04S7N024HATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
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IAUCN04S7N024HATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: PG-TDSON-8-56 Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Drain to Source Voltage (Vdss): 40V Power - Max: 75W (Tc) Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
 |
IAUCN04S7N024HATMA1 | Infineon Technologies |
MOSFETs 40 V, N-Ch, 2.46 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7 |
товару немає в наявності |
В кошику од. на суму грн. |
| IAUCN04S7N024HATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
Description: MOSFET_(20V 40V)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: PG-TDSON-8-56
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Drain to Source Voltage (Vdss): 40V
Power - Max: 75W (Tc)
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUCN04S7N024HATMA1 |
|
Виробник: Infineon Technologies
MOSFETs 40 V, N-Ch, 2.46 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
MOSFETs 40 V, N-Ch, 2.46 m?, Automotive Power MOSFET, SSO8 HB (5x6), OptiMOS-7
товару немає в наявності
В кошику
од. на суму грн.