IAUCN04S7N024HATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 75W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V
Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PG-TDSON-8-56
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 164.60 грн |
| 10+ | 117.42 грн |
| 25+ | 107.10 грн |
| 100+ | 89.94 грн |
| 250+ | 84.88 грн |
| 500+ | 81.84 грн |
| 1000+ | 78.03 грн |
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Технічний опис IAUCN04S7N024HATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 75W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 100A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V, Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PG-TDSON-8-56, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUCN04S7N024HATMA1
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IAUCN04S7N024HATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 75W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 100A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 2226pF @ 20V Rds On (Max) @ Id, Vgs: 2.46mOhm @ 50A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PG-TDSON-8-56 Grade: Automotive Qualification: AEC-Q101 |
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