IAUCN08S7N019TATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
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Технічний опис IAUCN08S7N019TATMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tj), Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 93.4µA, Supplier Device Package: PG-LHDSO-10-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN08S7N019TATMA1 за ціною від 93.74 грн до 300.96 грн
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IAUCN08S7N019TATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Cut Tape (CT) Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 93.4µA Supplier Device Package: PG-LHDSO-10-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 5779 шт: термін постачання 21-31 дні (днів) |
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IAUCN08S7N019TATMA1 | Infineon Technologies |
MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7 |
на замовлення 5284 шт: термін постачання 21-30 дні (днів) |
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| IAUCN08S7N019TATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 10-LSOP (0.209", 5.30mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 1.94mOhm @ 88A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 93.4µA
Supplier Device Package: PG-LHDSO-10-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6061 pF @ 40 V
Qualification: AEC-Q101
на замовлення 5779 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 266.42 грн |
| 10+ | 168.44 грн |
| 100+ | 118.34 грн |
| 500+ | 99.58 грн |
| IAUCN08S7N019TATMA1 |
|
Виробник: Infineon Technologies
MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
MOSFETs 80 V, N-Ch, 1.94 mOhm max, Automotive MOSFET, top-side cooled SSO10T, OptiMOS 7
на замовлення 5284 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 300.96 грн |
| 10+ | 195.34 грн |
| 100+ | 119.12 грн |
| 500+ | 100.09 грн |
| 2000+ | 93.74 грн |