IAUCN08S7N034ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A
Supplier Device Package: PG-TDSON-8-34
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Qualification: AEC-Q101
на замовлення 4047 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 189.74 грн |
| 10+ | 117.73 грн |
| 100+ | 83.62 грн |
| 500+ | 63.30 грн |
| 1000+ | 60.70 грн |
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Технічний опис IAUCN08S7N034ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A, Supplier Device Package: PG-TDSON-8-34, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Qualification: AEC-Q101.
Інші пропозиції IAUCN08S7N034ATMA1
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IAUCN08S7N034ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A Supplier Device Package: PG-TDSON-8-34 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Qualification: AEC-Q101 |
товару немає в наявності |