IAUCN10S7N021ATMA1 INFINEON
Виробник: INFINEON
Description: INFINEON - IAUCN10S7N021ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 175 A, 2100 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 175A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: N
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.2V
euEccn: NLR
Verlustleistung: 217W
Anzahl der Pins: 8Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2100µohm
SVHC: Lead (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 180.08 грн |
| 500+ | 140.50 грн |
| 1000+ | 126.87 грн |
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Технічний опис IAUCN10S7N021ATMA1 INFINEON
Description: INFINEON - IAUCN10S7N021ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 175 A, 2100 µohm, TDSON, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 175A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.2V, euEccn: NLR, Verlustleistung: 217W, Bauform - Transistor: TDSON, Anzahl der Pins: 8Pin(s), Produktpalette: OptiMOS 7 Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 2100µohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції IAUCN10S7N021ATMA1 за ціною від 100.78 грн до 384.01 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUCN10S7N021ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 7357 шт: термін постачання 21-31 дні (днів) |
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IAUCN10S7N021ATMA1 | Infineon Technologies |
MOSFETs 100V, N-Ch, 2.1 mohm max, Automotive MOSFET, SSO8 (5x6), OptiMOS 7 |
на замовлення 79 шт: термін постачання 21-30 дні (днів) |
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IAUCN10S7N021ATMA1 | INFINEON |
Description: INFINEON - IAUCN10S7N021ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 175 A, 2100 µohm, TDSON, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 175A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.2V euEccn: NLR Verlustleistung: 217W Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS 7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 2100µohm SVHC: Lead (25-Jun-2025) |
на замовлення 4210 шт: термін постачання 21-31 дні (днів) |
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IAUCN10S7N021ATMA1 | Infineon Technologies |
Description: MOSFET_(75V 120V( Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tj) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V Power Dissipation (Max): 217W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 130µA Supplier Device Package: PG-TDSON-8-53 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 3500 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 3500 шт В кошику од. на суму грн. |
| IAUCN10S7N021ATMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 7357 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 288.63 грн |
| 10+ | 182.64 грн |
| 100+ | 128.32 грн |
| 500+ | 100.78 грн |
| IAUCN10S7N021ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs 100V, N-Ch, 2.1 mohm max, Automotive MOSFET, SSO8 (5x6), OptiMOS 7
MOSFETs 100V, N-Ch, 2.1 mohm max, Automotive MOSFET, SSO8 (5x6), OptiMOS 7
на замовлення 79 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 319.05 грн |
| 10+ | 209.93 грн |
| 100+ | 140.26 грн |
| 500+ | 124.05 грн |
| 1000+ | 106.43 грн |
| 2500+ | 100.79 грн |
| IAUCN10S7N021ATMA1 |
|
Виробник: INFINEON
Description: INFINEON - IAUCN10S7N021ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 175 A, 2100 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 175A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.2V
euEccn: NLR
Verlustleistung: 217W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 7 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2100µohm
SVHC: Lead (25-Jun-2025)
Description: INFINEON - IAUCN10S7N021ATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 175 A, 2100 µohm, TDSON, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 175A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.2V
euEccn: NLR
Verlustleistung: 217W
Bauform - Transistor: TDSON
Anzahl der Pins: 8Pin(s)
Produktpalette: OptiMOS 7 Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 2100µohm
SVHC: Lead (25-Jun-2025)
на замовлення 4210 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 384.01 грн |
| 10+ | 252.45 грн |
| 100+ | 180.08 грн |
| 500+ | 140.50 грн |
| 1000+ | 126.87 грн |
| IAUCN10S7N021ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 88A, 10V
Power Dissipation (Max): 217W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 130µA
Supplier Device Package: PG-TDSON-8-53
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7153 pF @ 50 V
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)