IAUMN08S5N012GAUMA1 Infineon Technologies

Description: MOSFET_(75V 120V(, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 13550 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 194 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Grade: Automotive, Supplier Device Package: PG-HSOG-4-1, Vgs(th) (Max) @ Id: 3.8V @ 232µA, Power Dissipation (Max): 325W (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tj), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-PowerSFN, Packaging: Tape & Reel (TR).