| Кількість | Ціна |
|---|---|
| 2+ | 323.98 грн |
| 10+ | 265.86 грн |
| 100+ | 194.53 грн |
| 500+ | 177.62 грн |
| 1000+ | 171.27 грн |
| 2000+ | 145.19 грн |
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Технічний опис IAUMN10S5N016GAUMA1 Infineon Technologies
Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 4-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tj), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 230µA, Supplier Device Package: PG-HSOG-4-1, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V, Qualification: AEC-Q101.
Інші пропозиції IAUMN10S5N016GAUMA1 за ціною від 199.63 грн до 431.35 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IAUMN10S5N016GAUMA1 | Infineon Technologies |
 Description: MOSFET_(75V 120V(Packaging: Cut Tape (CT) Package / Case: 4-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220A (Tj) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 230µA Supplier Device Package: PG-HSOG-4-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V Qualification: AEC-Q101 |
на замовлення 385 шт: термін постачання 21-31 дні (днів) |
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| IAUMN10S5N016GAUMA1 |
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Виробник: Infineon Technologies
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
Description: MOSFET_(75V 120V(
Packaging: Cut Tape (CT)
Package / Case: 4-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tj)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Power Dissipation (Max): 325W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 230µA
Supplier Device Package: PG-HSOG-4-1
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13570 pF @ 50 V
Qualification: AEC-Q101
на замовлення 385 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 431.35 грн |
| 10+ | 277.71 грн |
| 100+ | 199.63 грн |