IAUS300N04S4N007ATMA1 Infineon Technologies

Description: MOSFET_(20V 40V) PG-HSOG-8, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 27356 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 342 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: PG-HSOG-8-1, Vgs(th) (Max) @ Id: 4V @ 275µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 0.74mOhm @ 100A, 10V, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerSMD, Gull Wing, Packaging: Tape & Reel (TR).