IAUT165N08S5N029ATMA1 Infineon Technologies

Description: MOSFET N-CH 80V 165A 8HSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 165A (Tc), Rds On (Max) @ Id, Vgs: 2.9mOhm @ 80A, 10V, Power Dissipation (Max): 167W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 108µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6370 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.