IAUT300N10S5N014ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET_(75V 120V( PG-HSOF-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360A (Tj)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Supplier Device Package: PG-HSOF-8-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 178.09 грн |
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Технічний опис IAUT300N10S5N014ATMA1 Infineon Technologies
Description: MOSFET_(75V 120V( PG-HSOF-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 360A (Tj), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 275µA, Supplier Device Package: PG-HSOF-8-1, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUT300N10S5N014ATMA1 за ціною від 175.82 грн до 456.03 грн
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IAUT300N10S5N014ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(75V 120V( PG-HSOF-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360A (Tj) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 275µA Supplier Device Package: PG-HSOF-8-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 216 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16011 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5124 шт: термін постачання 21-31 дні (днів) |
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IAUT300N10S5N014ATMA1 | Виробник : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
на замовлення 1886 шт: термін постачання 21-30 дні (днів) |
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| IAUT300N10S5N014ATMA1 | Виробник : Infineon Technologies |
SP005427384 |
товару немає в наявності |
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| IAUT300N10S5N014ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 216nC Technology: OptiMOS™ 5 Kind of channel: enhancement Pulsed drain current: 1315A Gate-source voltage: ±20V Mounting: SMD Case: PG-HSOF-8 Drain-source voltage: 100V Drain current: 46A On-state resistance: 2mΩ Type of transistor: N-MOSFET кількість в упаковці: 2000 шт |
товару немає в наявності |
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| IAUT300N10S5N014ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 1315A; 375W Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 216nC Technology: OptiMOS™ 5 Kind of channel: enhancement Pulsed drain current: 1315A Gate-source voltage: ±20V Mounting: SMD Case: PG-HSOF-8 Drain-source voltage: 100V Drain current: 46A On-state resistance: 2mΩ Type of transistor: N-MOSFET |
товару немає в наявності |