IAUTN08S5N012LATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 80V 300A PG-HSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel, Common Drain, Common Source
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 375W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 275µA
Supplier Device Package: PG-HSOF-8-2
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1981 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 412.03 грн |
| 10+ | 302.81 грн |
| 25+ | 279.47 грн |
| 100+ | 238.17 грн |
| 250+ | 226.67 грн |
| 500+ | 219.75 грн |
| 1000+ | 210.54 грн |
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Технічний опис IAUTN08S5N012LATMA1 Infineon Technologies
Description: MOSFET 2N-CH 80V 300A PG-HSOF, Packaging: Cut Tape (CT), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Common Drain, Common Source, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 375W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 300A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V, Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, Vgs(th) (Max) @ Id: 3.3V @ 275µA, Supplier Device Package: PG-HSOF-8-2, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUTN08S5N012LATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IAUTN08S5N012LATMA1 | Виробник : Infineon Technologies |
Automotive MOSFET |
товару немає в наявності |
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IAUTN08S5N012LATMA1 | Виробник : Infineon Technologies |
Description: MOSFET 2N-CH 80V 300A PG-HSOF Packaging: Tray Package / Case: 8-PowerSFN Mounting Type: Surface Mount Configuration: 2 N-Channel, Common Drain, Common Source Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 375W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Input Capacitance (Ciss) (Max) @ Vds: 15340pF @ 40V Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Vgs(th) (Max) @ Id: 3.3V @ 275µA Supplier Device Package: PG-HSOF-8-2 Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |