IAUTN15S6N025TATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(120V 300V)
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 245A (Tj)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4V @ 270µA
Supplier Device Package: PG-HDSOP-16-2
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1+ | 592.23 грн |
| 10+ | 443.20 грн |
| 25+ | 411.45 грн |
| 100+ | 353.36 грн |
| 250+ | 337.75 грн |
| 500+ | 328.33 грн |
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Технічний опис IAUTN15S6N025TATMA1 Infineon Technologies
Description: MOSFET_(120V 300V), Packaging: Tape & Reel (TR), Package / Case: 16-PowerSOP Module, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 245A (Tj), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: PG-HDSOP-16-2, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 8V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V, Qualification: AEC-Q101.
Інші пропозиції IAUTN15S6N025TATMA1 за ціною від 331.71 грн до 621.46 грн
| Фото | Назва | Виробник | Інформація |
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IAUTN15S6N025TATMA1 | Виробник : Infineon Technologies |
MOSFETs 150 V, N-Ch, 2.5 mOhms max, Automotive MOSFET, TOLT (10x15) |
на замовлення 2902 шт: термін постачання 21-30 дні (днів) |
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IAUTN15S6N025TATMA1 | Виробник : Infineon Technologies |
Description: MOSFET_(120V 300V) Packaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 245A (Tj) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 100A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-HDSOP-16-2 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 75 V Qualification: AEC-Q101 |
товару немає в наявності |