IAUZ30N06S5L140ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5000+ | 19.43 грн |
| 10000+ | 17.38 грн |
| 15000+ | 16.71 грн |
| 25000+ | 14.96 грн |
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Технічний опис IAUZ30N06S5L140ATMA1 Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tj), Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 10µA, Supplier Device Package: PG-TSDSON-8-32, Grade: Automotive, Part Status: Active, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції IAUZ30N06S5L140ATMA1 за ціною від 19.57 грн до 82.46 грн
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IAUZ30N06S5L140ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 60V 30A TSDSON-8-32 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tj) Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TSDSON-8-32 Grade: Automotive Part Status: Active Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 30695 шт: термін постачання 21-31 дні (днів) |
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| IAUZ30N06S5L140ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
Qualification: AEC-Q101
на замовлення 30695 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 82.46 грн |
| 10+ | 49.48 грн |
| 100+ | 32.52 грн |
| 500+ | 23.65 грн |
| 1000+ | 21.43 грн |
| 2000+ | 19.57 грн |