IAUZ40N06S5N105ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 96.86 грн |
| 10+ | 58.73 грн |
| 100+ | 38.91 грн |
| 500+ | 28.52 грн |
| 1000+ | 25.95 грн |
| 2000+ | 23.78 грн |
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Технічний опис IAUZ40N06S5N105ATMA1 Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tj), Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 3.4V @ 13µA, Supplier Device Package: PG-TSDSON-8-32, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції IAUZ40N06S5N105ATMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IAUZ40N06S5N105ATMA1 | Infineon Technologies |
Description: MOSFET_)40V 60V) PG-TSDSON-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 13µA Supplier Device Package: PG-TSDSON-8-32 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
 |
IAUZ40N06S5N105ATMA1 | Infineon Technologies |
MOSFETs MOSFET_)40V 60V) |
товару немає в наявності |
В кошику од. на суму грн. |
| IAUZ40N06S5N105ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Power dissipation: 42W Case: PG-TSDSON-8 On-state resistance: 12.8mΩ Mounting: SMD Gate charge: 16.3nC Kind of channel: enhancement Kind of package: reel; tape Technology: OptiMOS™ 5 Gate-source voltage: ±20V Pulsed drain current: 120A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| IAUZ40N06S5N105ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET_)40V 60V) PG-TSDSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 10.5mOhm @ 20A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 13µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1099 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| IAUZ40N06S5N105ATMA1 |
|
Виробник: Infineon Technologies
MOSFETs MOSFET_)40V 60V)
MOSFETs MOSFET_)40V 60V)
товару немає в наявності
В кошику
од. на суму грн.
| IAUZ40N06S5N105ATMA1 |
|
Виробник: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 120A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 120A; 42W; PG-TSDSON-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 42W
Case: PG-TSDSON-8
On-state resistance: 12.8mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of channel: enhancement
Kind of package: reel; tape
Technology: OptiMOS™ 5
Gate-source voltage: ±20V
Pulsed drain current: 120A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.