IAUZ40N08S5N100ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 5000+ | 34.94 грн |
| 10000+ | 31.49 грн |
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Технічний опис IAUZ40N08S5N100ATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 27µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції IAUZ40N08S5N100ATMA1 за ціною від 34.85 грн до 137.16 грн
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IAUZ40N08S5N100ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 |
на замовлення 14555 шт: термін постачання 21-31 дні (днів) |
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| IAUZ40N08S5N100ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
на замовлення 14555 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 137.16 грн |
| 10+ | 83.95 грн |
| 100+ | 56.13 грн |
| 500+ | 41.48 грн |
| 1000+ | 37.88 грн |
| 2000+ | 34.85 грн |