IAUZ40N08S5N100ATMA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET N-CH 75V 80A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 27µA
Supplier Device Package: PG-TDSON-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Qualification: AEC-Q101
на замовлення 2745 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 119.37 грн |
| 10+ | 73.34 грн |
| 100+ | 49.11 грн |
| 500+ | 36.35 грн |
| 1000+ | 33.21 грн |
| 2000+ | 32.84 грн |
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Технічний опис IAUZ40N08S5N100ATMA1 Infineon Technologies
Description: MOSFET N-CH 75V 80A 8TSDSON, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V, Power Dissipation (Max): 68W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 27µA, Supplier Device Package: PG-TDSON-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V, Qualification: AEC-Q101.
Інші пропозиції IAUZ40N08S5N100ATMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IAUZ40N08S5N100ATMA1 | Виробник : Infineon Technologies |
Trans MOSFET N-CH 80V 40A Automotive 8-Pin TSDSON EP T/R |
товару немає в наявності |
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| IAUZ40N08S5N100ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 24.2nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 5000 шт |
товару немає в наявності |
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IAUZ40N08S5N100ATMA1 | Виробник : Infineon Technologies |
Description: MOSFET N-CH 75V 80A 8TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 27µA Supplier Device Package: PG-TDSON-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 24.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V Qualification: AEC-Q101 |
товару немає в наявності |
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IAUZ40N08S5N100ATMA1 | Виробник : Infineon Technologies |
MOSFETs MOSFET_(75V 120V( |
товару немає в наявності |
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| IAUZ40N08S5N100ATMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 40A; Idm: 160A; 68W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 80V Drain current: 40A Pulsed drain current: 160A Power dissipation: 68W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 24.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |