IAUZN04S7N013ATMA2 Infineon Technologies
на замовлення 3088 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 78.56 грн |
| 10+ | 56.11 грн |
| 100+ | 38.84 грн |
| 500+ | 34.81 грн |
| 1000+ | 32.61 грн |
| 2500+ | 30.40 грн |
| 5000+ | 29.64 грн |
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Технічний опис IAUZN04S7N013ATMA2 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Cut Tape (CT), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 193A (Tj), Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3V @ 35µA, Supplier Device Package: PG-TSDSON-8-44, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUZN04S7N013ATMA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| IAUZN04S7N013ATMA2 | Виробник : Infineon Technologies |
 Description: MOSFET_(20V 40V)Packaging: Tray Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 193A (Tj) Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3V @ 35µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |
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| IAUZN04S7N013ATMA2 | Виробник : Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 193A (Tj) Rds On (Max) @ Id, Vgs: 1.33mOhm @ 30A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 3V @ 35µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3264 pF @ 20 V Qualification: AEC-Q101 |
товару немає в наявності |