IAUZN04S7N049ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 5000+ | 19.91 грн |
| 10000+ | 17.84 грн |
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Технічний опис IAUZN04S7N049ATMA1 Infineon Technologies
Description: MOSFET_(20V 40V), Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj), Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V, Power Dissipation (Max): 45W (Tc), Vgs(th) (Max) @ Id: 3V @ 10µA, Supplier Device Package: PG-TSDSON-8-44, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V, Qualification: AEC-Q101.
Інші пропозиції IAUZN04S7N049ATMA1 за ціною від 20.02 грн до 83.26 грн
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IAUZN04S7N049ATMA1 | Infineon Technologies |
Description: MOSFET_(20V 40V) Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj) Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V Power Dissipation (Max): 45W (Tc) Vgs(th) (Max) @ Id: 3V @ 10µA Supplier Device Package: PG-TSDSON-8-44 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 10251 шт: термін постачання 21-31 дні (днів) |
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| IAUZN04S7N049ATMA1 |
|
Виробник: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 70A (Tj)
Rds On (Max) @ Id, Vgs: 4.93mOhm @ 30A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 10µA
Supplier Device Package: PG-TSDSON-8-44
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 922 pF @ 20 V
Qualification: AEC-Q101
на замовлення 10251 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 83.26 грн |
| 10+ | 50.24 грн |
| 100+ | 33.09 грн |
| 500+ | 24.13 грн |
| 1000+ | 21.90 грн |
| 2000+ | 20.02 грн |