IAUZN10S7N078ATMA1 Infineon Technologies

Description: MOSFET_(75V 120V(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76A (Tj), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 30A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 3.2V @ 33µA, Supplier Device Package: PG-TSDSON-8-39, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1839 pF @ 50 V, Qualification: AEC-Q101.