IDB10S60C Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE SIL CARB 600V 10A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 480pF @ 1V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 140 µA @ 600 V
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис IDB10S60C Infineon Technologies
Description: DIODE SIL CARB 600V 10A TO263-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 480pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO263-3-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A, Current - Reverse Leakage @ Vr: 140 µA @ 600 V.
Інші пропозиції IDB10S60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| IDB10S60C | Виробник : Infineon Technologies |
Schottky Diodes & Rectifiers 2ND GEN THINQ 600V SiC Schottky Diode |
товар відсутній |