IDB23E60ATMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE GP 600V 41A TO263-3-2
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 120 ns
Technology: Standard
Current - Average Rectified (Io): 41A
Supplier Device Package: PG-TO263-3-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
| Кількість | Ціна |
|---|---|
| 430+ | 50.66 грн |
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Технічний опис IDB23E60ATMA1 Infineon Technologies
Description: DIODE GP 600V 41A TO263-3-2, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO263-3-2, Current - Average Rectified (Io): 41A, Technology: Standard, Reverse Recovery Time (trr): 120 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB.
Інші пропозиції IDB23E60ATMA1
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IDB23E60ATMA1 | Виробник : Infineon Technologies |
Description: DIODE GP 600V 41A TO263-3-2 Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 23 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO263-3-2 Current - Average Rectified (Io): 41A Technology: Standard Reverse Recovery Time (trr): 120 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
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