IDD05SG60C Infineon Technologies
на замовлення 230 шт:
термін постачання 21-30 дні (днів)
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Технічний опис IDD05SG60C Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: PG-TO252-3, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Current - Reverse Leakage @ Vr: 30 µA @ 600 V.
Інші пропозиції IDD05SG60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IDD05SG60C | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 18A Leakage current: 0.4µA Power dissipation: 56W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 3G; SiC Mounting: SMD Case: PG-TO252-3 Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V кількість в упаковці: 1 шт |
товару немає в наявності |
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IDD05SG60C | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 600V 5A TO252-3 Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
товару немає в наявності |
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IDD05SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; PG-TO252-3; SiC; SMD; 600V; 5A; 56W Load current: 5A Semiconductor structure: single diode Max. forward impulse current: 18A Leakage current: 0.4µA Power dissipation: 56W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: CoolSiC™ 3G; SiC Mounting: SMD Case: PG-TO252-3 Max. off-state voltage: 0.6kV Max. forward voltage: 2.1V |
товару немає в наявності |