Технічний опис IDD05SG60C Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V.
Інші пропозиції IDD05SG60C
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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IDD05SG60C | Infineon Technologies |
 Description: DIODE SIL CARB 600V 5A TO252-3Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 110pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V |
товару немає в наявності |
В кошику од. на суму грн. |
| IDD05SG60C |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A TO252-3
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Description: DIODE SIL CARB 600V 5A TO252-3
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
товару немає в наявності
В кошику
од. на суму грн.