IDD05SG60CXTMA2 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 199.15 грн |
| 10+ | 173.87 грн |
| 100+ | 130.98 грн |
| 250+ | 124.71 грн |
| 500+ | 117.05 грн |
| 1000+ | 100.33 грн |
| 2500+ | 94.06 грн |
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Технічний опис IDD05SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2523, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Last Time Buy, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IDD05SG60CXTMA2
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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IDD05SG60CXTMA2 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 600V 5A PGTO2523Current - Reverse Leakage @ Vr: 30 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Last Time Buy Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 5A Capacitance @ Vr, F: 110pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
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