IDD06SG60CXTMA2 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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Технічний опис IDD06SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523, Current - Reverse Leakage @ Vr: 50 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IDD06SG60CXTMA2 за ціною від 76.83 грн до 294.97 грн
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IDD06SG60CXTMA2 | Infineon Technologies |
SiC Schottky Diodes SIC DIODES |
на замовлення 2045 шт: термін постачання 21-30 дні (днів) |
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IDD06SG60CXTMA2 | Infineon Technologies |
Description: DIODE SIL CARB 600V 6A PGTO2523 Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 130pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 50 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A |
на замовлення 9208 шт: термін постачання 21-31 дні (днів) |
|
| IDD06SG60CXTMA2 |
|
Виробник: Infineon Technologies
SiC Schottky Diodes SIC DIODES
SiC Schottky Diodes SIC DIODES
на замовлення 2045 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 261.49 грн |
| 10+ | 153.19 грн |
| 100+ | 102.90 грн |
| 500+ | 90.92 грн |
| 1000+ | 86.69 грн |
| 2500+ | 76.83 грн |
| IDD06SG60CXTMA2 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Description: DIODE SIL CARB 600V 6A PGTO2523
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
на замовлення 9208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 294.97 грн |
| 10+ | 186.16 грн |
| 100+ | 130.63 грн |
| 500+ | 100.35 грн |
| 1000+ | 93.21 грн |