IDD09SG60CXTMA2 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 378.26 грн |
| 10+ | 326.65 грн |
| 100+ | 246.69 грн |
| 250+ | 235.41 грн |
| 500+ | 222.02 грн |
| 1000+ | 201.58 грн |
| 2500+ | 188.89 грн |
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Технічний опис IDD09SG60CXTMA2 Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523, Current - Reverse Leakage @ Vr: 80 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO252-3, Current - Average Rectified (Io): 9A, Capacitance @ Vr, F: 280pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції IDD09SG60CXTMA2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IDD09SG60CXTMA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 9A PGTO2523Current - Reverse Leakage @ Vr: 80 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A Voltage - DC Reverse (Vr) (Max): 600 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO252-3 Current - Average Rectified (Io): 9A Capacitance @ Vr, F: 280pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| IDD09SG60CXTMA2 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: DIODE SIL CARB 600V 9A PGTO2523
Current - Reverse Leakage @ Vr: 80 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO252-3
Current - Average Rectified (Io): 9A
Capacitance @ Vr, F: 280pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.