IDDD04G65C6XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Bulk
Відгуки про товар
Написати відгук
Технічний опис IDDD04G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101, Current - Reverse Leakage @ Vr: 14 µA @ 420 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1, Current - Average Rectified (Io): 13A, Capacitance @ Vr, F: 205pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Інші пропозиції IDDD04G65C6XTMA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101 Current - Reverse Leakage @ Vr: 14 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 13A Capacitance @ Vr, F: 205pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. |
|
|
IDDD04G65C6XTMA1 | Infineon Technologies |
Description: DIODE SIC 650V 13A PGHDSOP101 Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 14 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 Current - Average Rectified (Io): 13A Capacitance @ Vr, F: 205pF @ 1V, 1MHz |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IDDD04G65C6XTMA1 | Infineon Technologies |
SiC Schottky Diodes |
товару немає в наявності |
Мінімальне замовлення: 1700 шт В кошику од. на суму грн. |
| IDDD04G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
Description: DIODE SIC 650V 13A PGHDSOP101
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.
| IDDD04G65C6XTMA1 |
|
Виробник: Infineon Technologies
Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
Description: DIODE SIC 650V 13A PGHDSOP101
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 14 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Current - Average Rectified (Io): 13A
Capacitance @ Vr, F: 205pF @ 1V, 1MHz
товару немає в наявності
В кошику
од. на суму грн.
| IDDD04G65C6XTMA1 |
|
Виробник: Infineon Technologies
SiC Schottky Diodes
SiC Schottky Diodes
товару немає в наявності
Мінімальне замовлення: 1700 шт
В кошику
од. на суму грн.