IDDD08G65C6XTMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 3+ | 143.90 грн |
| 10+ | 109.42 грн |
| 25+ | 93.74 грн |
| 100+ | 87.40 грн |
| 500+ | 84.58 грн |
| 1700+ | 81.76 грн |
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Технічний опис IDDD08G65C6XTMA1 Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101, Current - Reverse Leakage @ Vr: 27 µA @ 420 V, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-HDSOP-10-1, Current - Average Rectified (Io): 24A, Capacitance @ Vr, F: 401pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 10-PowerSOP Module, Packaging: Tape & Reel (TR).
Інші пропозиції IDDD08G65C6XTMA1 за ціною від 105.35 грн до 286.25 грн
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IDDD08G65C6XTMA1 | Infineon Technologies |
 Description: DIODE SIC 650V 24A PGHDSOP101Current - Average Rectified (Io): 24A Capacitance @ Vr, F: 401pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 10-PowerSOP Module Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 27 µA @ 420 V Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-HDSOP-10-1 |
на замовлення 1813 шт: термін постачання 21-31 дні (днів) |
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| IDDD08G65C6XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
Description: DIODE SIC 650V 24A PGHDSOP101
Current - Average Rectified (Io): 24A
Capacitance @ Vr, F: 401pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 10-PowerSOP Module
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 27 µA @ 420 V
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-HDSOP-10-1
на замовлення 1813 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 286.25 грн |
| 10+ | 179.89 грн |
| 100+ | 126.47 грн |
| 500+ | 105.35 грн |