IDH03SG60C Infineon Technologies

Description: DIODE SIL CARB 600V 3A TO220-2-2, Current - Reverse Leakage @ Vr: 15 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2-2, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 60pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Bulk.