Продукція > INFINEON TECHNOLOGIES > IDH04G65C5XKSA2

IDH04G65C5XKSA2 Infineon Technologies

Name: IDH04G65C5XKSA2
Brand: Infineon Technologies
SKU: 6709788-3
Price: 54.1 UAH
Availability: InStock

IDH04G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a30431ddc9372011ed0010fda1bd3&fileId=db3a304339dcf4b1013a033ff5d95947

Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 4A TO220-2-1
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A
Current - Reverse Leakage @ Vr: 70 µA @ 650 V

на замовлення 4451 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна без ПДВ
3+	132.93 грн
50+	102.72 грн
100+	84.52 грн
500+	67.12 грн
1000+	56.95 грн
2000+	54.1 грн

Мінімальне замовлення: 3

Відгуки про товар

Написати відгук

Технічний опис IDH04G65C5XKSA2 Infineon Technologies

Description: DIODE SIL CARB 650V 4A TO220-2-1, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 4A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A, Current - Reverse Leakage @ Vr: 70 µA @ 650 V.