IDH05SG60CXKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2202
Supplier Device Package: PG-TO220-2-2
Current - Average Rectified (Io): 5A
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 30 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Discontinued at Digi-Key
Operating Temperature - Junction: -55°C ~ 175°C
| Кількість | Ціна |
|---|---|
| 147+ | 153.20 грн |
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Технічний опис IDH05SG60CXKSA1 Infineon Technologies
Description: DIODE SIL CARB 600V 5A PGTO2202, Supplier Device Package: PG-TO220-2-2, Current - Average Rectified (Io): 5A, Capacitance @ Vr, F: 110pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Current - Reverse Leakage @ Vr: 30 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Part Status: Discontinued at Digi-Key, Operating Temperature - Junction: -55°C ~ 175°C.
Інші пропозиції IDH05SG60CXKSA1
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IDH05SG60CXKSA1 | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 600V 5A PGTO2202 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 110pF @ 1V, 1MHz Current - Average Rectified (Io): 5A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 5 A Current - Reverse Leakage @ Vr: 30 µA @ 600 V |
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