IDH06G65C6XKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 194.06 грн |
| 10+ | 102.94 грн |
| 100+ | 80.35 грн |
| 500+ | 65.48 грн |
| 1000+ | 57.02 грн |
| 2500+ | 56.81 грн |
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Технічний опис IDH06G65C6XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 16A PGTO220, Current - Reverse Leakage @ Vr: 20 µA @ 420 V, Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO220-2, Current - Average Rectified (Io): 16A, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube, Capacitance @ Vr, F: 302pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky.
Інші пропозиції IDH06G65C6XKSA1 за ціною від 87.05 грн до 202.20 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IDH06G65C6XKSA1 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 16A PGTO220Current - Reverse Leakage @ Vr: 20 µA @ 420 V Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-TO220-2 Current - Average Rectified (Io): 16A Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Capacitance @ Vr, F: 302pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky |
на замовлення 341 шт: термін постачання 21-31 дні (днів) |
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| IDH06G65C6XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 16A PGTO220
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Description: DIODE SIL CARB 650V 16A PGTO220
Current - Reverse Leakage @ Vr: 20 µA @ 420 V
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO220-2
Current - Average Rectified (Io): 16A
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Capacitance @ Vr, F: 302pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
на замовлення 341 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 202.20 грн |
| 50+ | 96.56 грн |
| 100+ | 87.05 грн |