IDH06SG60CXKSA2 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 275.47 грн |
| 10+ | 137.79 грн |
| 100+ | 109.25 грн |
| 500+ | 87.40 грн |
| 1000+ | 82.46 грн |
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Технічний опис IDH06SG60CXKSA2 Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2201, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 130pF @ 1V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: PG-TO220-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A, Current - Reverse Leakage @ Vr: 50 µA @ 600 V.
Інші пропозиції IDH06SG60CXKSA2 за ціною від 310.04 грн до 310.04 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IDH06SG60CXKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 600V 6A PGTO2201Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V |
на замовлення 37 шт: термін постачання 21-31 дні (днів) |
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| IDH06SG60CXKSA2 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 600V 6A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Description: DIODE SIL CARB 600V 6A PGTO2201
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 130pF @ 1V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: PG-TO220-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 6 A
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
на замовлення 37 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 310.04 грн |