Технічний опис IDH09G65C5XKSA1 Infineon Technologies
Description: DIODE SIL CARB 650V 9A TO220-2-2, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 270pF @ 1V, 1MHz, Current - Average Rectified (Io): 9A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A, Current - Reverse Leakage @ Vr: 310 µA @ 650 V.
Інші пропозиції IDH09G65C5XKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IDH09G65C5XKSA1 | Виробник : Infineon Technologies |
 Description: DIODE SIL CARB 650V 9A TO220-2-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 270pF @ 1V, 1MHz Current - Average Rectified (Io): 9A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 9 A Current - Reverse Leakage @ Vr: 310 µA @ 650 V |
товар відсутній |