IDH10SG60C INFINEON TECHNOLOGIES
Виробник: INFINEON TECHNOLOGIESCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 120W; PG-TO220-2
Technology: CoolSiC™ 3G; SiC
Power dissipation: 120W
Case: PG-TO220-2
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.8V
Load current: 10A
Leakage current: 0.8µA
Type of diode: Schottky rectifying
Max. forward impulse current: 51A
кількість в упаковці: 1 шт
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Технічний опис IDH10SG60C INFINEON TECHNOLOGIES
Description: DIODE SIL CARB 600V 10A TO220-2, Packaging: Bulk, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 290pF @ 1V, 1MHz, Current - Average Rectified (Io): 10A, Supplier Device Package: PG-TO220-2-2, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A, Current - Reverse Leakage @ Vr: 90 µA @ 600 V.
Інші пропозиції IDH10SG60C
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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| IDH10SG60C | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 600V 10A TO220-2 Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 290pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 10 A Current - Reverse Leakage @ Vr: 90 µA @ 600 V |
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IDH10SG60C | Виробник : Infineon Technologies |
Schottky Diodes & Rectifiers SIC DIODEN |
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IDH10SG60C | Виробник : INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; 120W; PG-TO220-2 Technology: CoolSiC™ 3G; SiC Power dissipation: 120W Case: PG-TO220-2 Mounting: THT Kind of package: tube Semiconductor structure: single diode Max. off-state voltage: 0.6kV Max. forward voltage: 1.8V Load current: 10A Leakage current: 0.8µA Type of diode: Schottky rectifying Max. forward impulse current: 51A |
товар відсутній |