IDK02G120C5XTMA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 2+ | 199.00 грн |
| 10+ | 122.39 грн |
| 100+ | 75.42 грн |
| 500+ | 65.48 грн |
| 1000+ | 56.53 грн |
| 2000+ | 55.61 грн |
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Технічний опис IDK02G120C5XTMA1 Infineon Technologies
Description: DIODE SIC 1.2KV 11.8A PGTO26321, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 182pF @ 1V, 1MHz, Current - Average Rectified (Io): 11.8A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A, Current - Reverse Leakage @ Vr: 18 µA @ 1200 V.
Інші пропозиції IDK02G120C5XTMA1 за ціною від 67.98 грн до 203.78 грн
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IDK02G120C5XTMA1 | Infineon Technologies |
 Description: DIODE SIC 1.2KV 11.8A PGTO26321Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 182pF @ 1V, 1MHz Current - Average Rectified (Io): 11.8A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A Current - Reverse Leakage @ Vr: 18 µA @ 1200 V |
на замовлення 597 шт: термін постачання 21-31 дні (днів) |
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| IDK02G120C5XTMA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 11.8A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 11.8A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
Description: DIODE SIC 1.2KV 11.8A PGTO26321
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 182pF @ 1V, 1MHz
Current - Average Rectified (Io): 11.8A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 2 A
Current - Reverse Leakage @ Vr: 18 µA @ 1200 V
на замовлення 597 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 203.78 грн |
| 10+ | 115.60 грн |
| 100+ | 84.50 грн |
| 500+ | 67.98 грн |