IDK05G120C5XTMA1 Infineon Technologies

Description: DIODE SIC 1.2KV 19.1A TO263-1, Current - Reverse Leakage @ Vr: 33 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO263-2-1, Current - Average Rectified (Io): 19.1A, Capacitance @ Vr, F: 301pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).