IDK20G120C5XTMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIL CARB 1.2KV 56A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
Description: DIODE SIL CARB 1.2KV 56A TO263-1
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 56A
Supplier Device Package: PG-TO263-2-1
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Current - Reverse Leakage @ Vr: 123 µA @ 1200 V
на замовлення 720 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1+ | 662.73 грн |
10+ | 546.55 грн |
100+ | 455.5 грн |
500+ | 377.18 грн |
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Технічний опис IDK20G120C5XTMA1 Infineon Technologies
Description: DIODE SIL CARB 1.2KV 56A TO263-1, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 56A, Supplier Device Package: PG-TO263-2-1, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 123 µA @ 1200 V.
Інші пропозиції IDK20G120C5XTMA1 за ціною від 349.62 грн до 719.43 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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IDK20G120C5XTMA1 | Виробник : Infineon Technologies | Schottky Diodes & Rectifiers SIC DISCRETE |
на замовлення 2820 шт: термін постачання 21-30 дні (днів) |
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IDK20G120C5XTMA1 | Виробник : Infineon Technologies | Rectifier Diode Schottky SiC 1.2KV 56A 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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IDK20G120C5XTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W Technology: CoolSiC™ 5G; SiC Power dissipation: 330W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 168A Load current: 20A Max. forward voltage: 2V Leakage current: 44µA кількість в упаковці: 1000 шт |
товар відсутній |
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IDK20G120C5XTMA1 | Виробник : Infineon Technologies |
Description: DIODE SIL CARB 1.2KV 56A TO263-1 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 56A Supplier Device Package: PG-TO263-2-1 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 123 µA @ 1200 V |
товар відсутній |
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IDK20G120C5XTMA1 | Виробник : INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 20A; PG-TO263-2; 330W Technology: CoolSiC™ 5G; SiC Power dissipation: 330W Case: PG-TO263-2 Mounting: SMD Kind of package: reel; tape Semiconductor structure: single diode Max. off-state voltage: 1.2kV Type of diode: Schottky rectifying Max. forward impulse current: 168A Load current: 20A Max. forward voltage: 2V Leakage current: 44µA |
товар відсутній |