IDL02G65C5XUMA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4
Current - Reverse Leakage @ Vr: 35 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-VSON-4
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: 4-PowerTSFN
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 303+ | 72.36 грн |
Відгуки про товар
Написати відгук
Технічний опис IDL02G65C5XUMA1 Infineon Technologies
Description: DIODE SIL CARBIDE 650V 2A VSON-4, Current - Reverse Leakage @ Vr: 35 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-VSON-4, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 70pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: 4-PowerTSFN, Packaging: Tape & Reel (TR).
Інші пропозиції IDL02G65C5XUMA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
IDL02G65C5XUMA1 | Виробник : Infineon Technologies |
Description: DIODE SIL CARBIDE 650V 2A VSON-4 Current - Reverse Leakage @ Vr: 35 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: PG-VSON-4 Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 70pF @ 1V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: 4-PowerTSFN Packaging: Tape & Reel (TR) |
товару немає в наявності |