IDW10G120C5BFKSA1 Infineon Technologies
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| 1+ | 446.51 грн |
| 10+ | 265.86 грн |
| 100+ | 181.84 грн |
| 480+ | 160.70 грн |
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Технічний опис IDW10G120C5BFKSA1 Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41, Supplier Device Package: PG-TO247-3-41, Current - Average Rectified (Io) (per Diode): 17A, Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube, Current - Reverse Leakage @ Vr: 40 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Operating Temperature - Junction: -55°C ~ 175°C.
Інші пропозиції IDW10G120C5BFKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IDW10G120C5BFKSA1 | Infineon Technologies |
 Description: DIODE ARRAY SIC 1200V TO247-3-41Supplier Device Package: PG-TO247-3-41 Current - Average Rectified (Io) (per Diode): 17A Diode Configuration: 1 Pair Common Cathode Technology: SiC (Silicon Carbide) Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Current - Reverse Leakage @ Vr: 40 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A Voltage - DC Reverse (Vr) (Max): 1200 V Operating Temperature - Junction: -55°C ~ 175°C |
товару немає в наявності |
В кошику од. на суму грн. |
| IDW10G120C5BFKSA1 |
|
Виробник: Infineon Technologies
Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
Description: DIODE ARRAY SIC 1200V TO247-3-41
Supplier Device Package: PG-TO247-3-41
Current - Average Rectified (Io) (per Diode): 17A
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Reverse Leakage @ Vr: 40 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -55°C ~ 175°C
товару немає в наявності
В кошику
од. на суму грн.