IDW15G120C5BFKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 583.01 грн |
| 10+ | 371.23 грн |
| 100+ | 252.33 грн |
| 240+ | 251.62 грн |
| 480+ | 250.21 грн |
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Технічний опис IDW15G120C5BFKSA1 Infineon Technologies
Description: DIODE ARR SIC 1200V 24A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 24A (DC), Supplier Device Package: PG-TO247-3-41, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A, Current - Reverse Leakage @ Vr: 62 µA @ 1200 V.
Інші пропозиції IDW15G120C5BFKSA1 за ціною від 566.58 грн до 823.85 грн
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IDW15G120C5BFKSA1 | Infineon Technologies |
 Description: DIODE ARR SIC 1200V 24A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 24A (DC) Supplier Device Package: PG-TO247-3-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A Current - Reverse Leakage @ Vr: 62 µA @ 1200 V |
на замовлення 240 шт: термін постачання 21-31 дні (днів) |
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| IDW15G120C5BFKSA1 |
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Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
Description: DIODE ARR SIC 1200V 24A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 24A (DC)
Supplier Device Package: PG-TO247-3-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 7.5 A
Current - Reverse Leakage @ Vr: 62 µA @ 1200 V
на замовлення 240 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 823.85 грн |
| 30+ | 633.22 грн |
| 120+ | 566.58 грн |