IDW20S120FKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: PG-TO247-3
Current - Average Rectified (Io) (per Diode): 10A (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Відгуки про товар
Написати відгук
Технічний опис IDW20S120FKSA1 Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3, Current - Reverse Leakage @ Vr: 240 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Part Status: Obsolete, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: PG-TO247-3, Current - Average Rectified (Io) (per Diode): 10A (DC), Diode Configuration: 1 Pair Common Cathode, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Інші пропозиції IDW20S120FKSA1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
IDW20S120FKSA1 | Infineon Technologies |
Description: DIODE ARR SIC 1200V 10A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A (DC) Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A Current - Reverse Leakage @ Vr: 240 µA @ 1200 V |
товару немає в наявності |
В кошику од. на суму грн. |
 |
IDW20S120FKSA1 | Infineon Technologies |
Diodes - General Purpose, Power, Switching SIC DIODES |
товару немає в наявності |
В кошику од. на суму грн. |
| IDW20S120FKSA1 |
|
Виробник: Infineon Technologies
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
Description: DIODE ARR SIC 1200V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A (DC)
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
Current - Reverse Leakage @ Vr: 240 µA @ 1200 V
товару немає в наявності
В кошику
од. на суму грн.
| IDW20S120FKSA1 |
|
Виробник: Infineon Technologies
Diodes - General Purpose, Power, Switching SIC DIODES
Diodes - General Purpose, Power, Switching SIC DIODES
товару немає в наявності
В кошику
од. на суму грн.