Технічний опис IDW30E60AFKSA1 Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 143 ns, Technology: Standard, Current - Average Rectified (Io): 60A, Supplier Device Package: PG-TO247-3, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 600 V.
Інші пропозиції IDW30E60AFKSA1
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IDW30E60AFKSA1 | Виробник : Infineon Technologies |
 Description: DIODE GEN PURP 600V 60A TO247-3Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
товару немає в наявності |
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IDW30E60AFKSA1 | Виробник : Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
товару немає в наявності |
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IDW30E60AFKSA1 | Виробник : Infineon Technologies |
Diodes - General Purpose, Power, Switching IGBT PRODUCTS |
товару немає в наявності |