IDW30E60AFKSA1 Infineon Technologies
Виробник: Infineon TechnologiesDescription: DIODE GEN PURP 600V 60A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 143 ns
Technology: Standard
Current - Average Rectified (Io): 60A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -40°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A
Current - Reverse Leakage @ Vr: 40 µA @ 600 V
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис IDW30E60AFKSA1 Infineon Technologies
Description: DIODE GEN PURP 600V 60A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 143 ns, Technology: Standard, Current - Average Rectified (Io): 60A, Supplier Device Package: PG-TO247-3, Operating Temperature - Junction: -40°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A, Current - Reverse Leakage @ Vr: 40 µA @ 600 V.
Інші пропозиції IDW30E60AFKSA1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
IDW30E60AFKSA1 | Виробник : Infineon Technologies |
Description: DIODE GEN PURP 600V 60A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 143 ns Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -40°C ~ 175°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2 V @ 30 A Current - Reverse Leakage @ Vr: 40 µA @ 600 V |
товару немає в наявності |
|
 |
IDW30E60AFKSA1 | Виробник : Infineon Technologies |
Diodes - General Purpose, Power, Switching IGBT PRODUCTS |
товару немає в наявності |