IDW30G65C5FKSA1 Infineon Technologies
Виробник: Infineon Technologies
Description: DIODE SIC 650V 30A PGTO24731
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 860pF @ 1V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: PG-TO247-3-1
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V
| Кількість | Ціна |
|---|---|
| 29+ | 690.51 грн |
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Технічний опис IDW30G65C5FKSA1 Infineon Technologies
Description: DIODE SIC 650V 30A PGTO24731, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 860pF @ 1V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: PG-TO247-3-1, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A, Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V.
Інші пропозиції IDW30G65C5FKSA1
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IDW30G65C5FKSA1 | Виробник : Infineon Technologies |
Description: DIODE SIC 650V 30A PGTO24731 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 860pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: PG-TO247-3-1 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Current - Reverse Leakage @ Vr: 1.1 mA @ 650 V |
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