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IDW40G65C5

IDW40G65C5 Infineon Technologies

Infineon-IDW40G65C5B-DS-v02_00-EN-1226855.pdf
Виробник: Infineon Technologies
Schottky Diodes & Rectifiers SIC DIODES
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Технічний опис IDW40G65C5 Infineon Technologies

Category: THT Schottky diodes, Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W, Mounting: THT, Max. forward impulse current: 153A, Max. forward voltage: 1.8V, Power dissipation: 112W, Technology: CoolSiC™ 5G; SiC, Max. off-state voltage: 650V, Load current: 40A, Kind of package: tube, Semiconductor structure: single diode, Leakage current: 8.2µA, Case: PG-TO247-3, Type of diode: Schottky rectifying.

Інші пропозиції IDW40G65C5

Фото Назва Виробник Інформація Доступність Ціна без ПДВ
IDW40G65C5XKSA1 IDW40G65C5XKSA1 INFINEON TECHNOLOGIES IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 153A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 8.2µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.
IDW40G65C5XKSA1 IDW40G65C5_Final_Datasheet_v_2_1.pdf?folderId=db3a304314dca38901151224afae0c96&fileId=db3a30433899edae0138a4c399d32237
IDW40G65C5XKSA1
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 40A; PG-TO247-3; 112W
Mounting: THT
Max. forward impulse current: 153A
Max. forward voltage: 1.8V
Power dissipation: 112W
Technology: CoolSiC™ 5G; SiC
Max. off-state voltage: 650V
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 8.2µA
Case: PG-TO247-3
Type of diode: Schottky rectifying
товару немає в наявності
В кошику  од. на суму  грн.