IDW40G65C5BXKSA2 Infineon Technologies
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| 1+ | 956.33 грн |
| 10+ | 674.38 грн |
| 100+ | 502.54 грн |
| 480+ | 462.37 грн |
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Технічний опис IDW40G65C5BXKSA2 Infineon Technologies
Description: DIODE SIL CARB 650V 20A PGTO2473, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 590pF @ 1V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: PG-TO247-3, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 210 µA @ 650 V.
Інші пропозиції IDW40G65C5BXKSA2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
IDW40G65C5BXKSA2 | Infineon Technologies |
 Description: DIODE SIL CARB 650V 20A PGTO2473Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 590pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: PG-TO247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 210 µA @ 650 V |
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IDW40G65C5BXKSA2 | INFINEON TECHNOLOGIES |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W Type of diode: Schottky rectifying Technology: CoolSiC™ 5G; SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A x2 Semiconductor structure: common cathode; double Case: PG-TO247-3 Max. forward voltage: 1.8V Max. forward impulse current: 87A Leakage current: 4.1µA Power dissipation: 112W Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. |
| IDW40G65C5BXKSA2 |
|
Виробник: Infineon Technologies
Description: DIODE SIL CARB 650V 20A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
Description: DIODE SIL CARB 650V 20A PGTO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 590pF @ 1V, 1MHz
Current - Average Rectified (Io): 20A
Supplier Device Package: PG-TO247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 210 µA @ 650 V
товару немає в наявності
В кошику
од. на суму грн.
| IDW40G65C5BXKSA2 |
|
Виробник: INFINEON TECHNOLOGIES
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20Ax2; PG-TO247-3; 112W
Type of diode: Schottky rectifying
Technology: CoolSiC™ 5G; SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A x2
Semiconductor structure: common cathode; double
Case: PG-TO247-3
Max. forward voltage: 1.8V
Max. forward impulse current: 87A
Leakage current: 4.1µA
Power dissipation: 112W
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.