IDWD15G120C5XKSA1 Infineon Technologies
| Кількість | Ціна |
|---|---|
| 1+ | 475.29 грн |
| 10+ | 269.10 грн |
| 480+ | 188.89 грн |
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Технічний опис IDWD15G120C5XKSA1 Infineon Technologies
Description: DIODE SIC 1.2KV 49A PGTO2472, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1050pF @ 1V, 1MHz, Current - Average Rectified (Io): 49A, Supplier Device Package: PG-TO247-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A, Current - Reverse Leakage @ Vr: 124 µA @ 1200 V.
Інші пропозиції IDWD15G120C5XKSA1 за ціною від 270.15 грн до 490.03 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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IDWD15G120C5XKSA1 | Infineon Technologies |
 Description: DIODE SIC 1.2KV 49A PGTO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1050pF @ 1V, 1MHz Current - Average Rectified (Io): 49A Supplier Device Package: PG-TO247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A Current - Reverse Leakage @ Vr: 124 µA @ 1200 V |
на замовлення 96 шт: термін постачання 21-31 дні (днів) |
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| IDWD15G120C5XKSA1 |
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Виробник: Infineon Technologies
Description: DIODE SIC 1.2KV 49A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
Description: DIODE SIC 1.2KV 49A PGTO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
Current - Average Rectified (Io): 49A
Supplier Device Package: PG-TO247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 15 A
Current - Reverse Leakage @ Vr: 124 µA @ 1200 V
на замовлення 96 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 490.03 грн |
| 30+ | 270.15 грн |