IDWD80G200C5XKSA1 Infineon Technologies

Description: DIODE SIC 2000V 214A PGTO2472U01, Packaging: Tube, Package / Case: TO-247-2, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 9100pF @ 1V, 100kHz, Current - Average Rectified (Io): 214A, Supplier Device Package: PG-TO247-2-U01, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 2000 V, Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 80 A, Current - Reverse Leakage @ Vr: 1.2 mA @ 2 kV.